Gate induced quantum confinement transition of a single dopant atom in a Si FinFET, published in Nature Physics.High precision quantum control of single donor spins in Si.Spectral energy tuning of InAs quantum dots with InGaAs quantum wells.Fine Structure Splitting in QDs Crystal Symmetry, Strain, and Piezo-Electricity.Some high-level overview on the following NEMO 3-D research results are available: Direct and exchange interactions and interactions with electromagnetic fields can be computed in a post-processing approach based on the NEMO 3-D single particle states. Boundary conditions to treat the effects of (surface states have been developed. NEMO3D has been used to analyze quantum dots, alloyed quantum dots, long range strain effects on quantum dots, effects of wetting layers, piezo-electric effects in quantum dots, quantum dot nuclear spin interactions, quantum dot phonon spectra, coupled quantum dot systems, miscut Si quantum wells with SiGe alloy buffers, core-shell nanowires, alloyed nanowires, phosphorous impurities in Silicon (P:Si qbits), bulk alloys. The development of the simulator is summarized in a 2002 invited publication in Computer Modeling in Engineering and Science, and in a 2007 Special Issue on Nanoelectronic Modeling in IEEE Transectaion on Electron Devices (Part I - Models and Benchmarks, Part II - Applications ). Strain is computed using the classical alence force field (VFF) with various Keating-like potentials. Atoms are represented by the empirical tight binding model using s, sp3s*, or sp3d5s* models with or without spin.
NEMO 3-D calculates eigenstates in (almost) arbitrarily shaped semiconductor structures in the typical column IV and III-V materials.
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